digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 3N204-3n205 dual gate mosfet maximum ratings rating symbol value unit drain-source voltage v ds 25 vdc drain-gate voltage v dg 30 vdc drain current l d 50 ma reverse gate current l g -10 ma forward gate current l gf 10 ma total device dissipation @ t a =25c derate above 25c p d 360 2.4 mw mw/c lead temperature t l 300 c operating and storage junction temperature range t j , t stg -65 to +175 c electrical characteristics (t a =25c unless otherwise noted) characteristic symbol min max unit off characteristics drain-source breakdown voltage (l d =10 a, v g1 =v g2 =-5.0v) v (br)dsx 25 - vdc gate 1-source breakdown voltage (l g1 =+/- 10 ma) note 1 v (br)g1so +/-6 +/-30 vdc gate 2-source breakdown voltage (l g2 =+/-10ma) note 1 v (br)g2so +/-6 +/-30 vdc gate 1 leakage current (v g1s =+/-5.0v, v g2s =v ds =0) l g1ss - +/-10 na gate 2 leakage current (v g2s =+/-5.0v, v g1s =v ds =0) l g2ss - +/-10 na gate 1 to source cutoff voltage (v ds =15v, v g2s =4.0v, l d =20 a) v g1s(off) -0.5 -4.0 vdc gate 2 to source cutoff voltage (v ds =15v, v g1s =0v, l d =20 a) v g2s(off) -0.2 -4.0 vdc on characteristics zero-gate-voltage drain current * (v ds =15v, v g2s =4.0v, v g1s =0v) l dss * 6 30 ma small signal characteristics forward transfer admittance (v ds =15v, v g2s =4.0v, v g1s =0v, f=1.0khz) note 2 y fs 10 22 mmhos input capacitance (v ds =15v, v g2s =4.0v, l d =l dss , f=1.0mhz) c iss typ.3.0 pf reverse transfer capacitance (v ds =15v, v g2s =4.0v, l d =10ma, f=1.0mhz) c rss 0.005 0.03 pf output capacitance (v ds =15v, v g2s =4.0v, l d =l dss , f=1.0mhz) c oss typ. 1.4 pf functional characteristics noise figure (v dd =18v, v gg =7.0v, f=200mhz) 3N204 (v ds =15v, v g2s =4.0v, l d =10ma, f=450mhz) 3N204 nf - - 3.5 5.0 db common source power gain (v dd =18v, v gg =7.0v, f=200mhz) 3N204 (v ds =15v, v g2s =4.0v, l d =10ma, f=450mhz) 3N204 g ps 20 14 28 - db bandwidth (v dd =18v, v gg =7.0v, f=200mhz) 3N204 (v dd =18v, f lo =245mhz, f rf =200mhz) note 4 3n205 bw 7.0 4.0 12 7.0 mhz gain control gate supply voltage (note 3) (v dd =18v, u gps=300db,f=200mhz) 3N204 v gg(gc) 0 -2.0 vdc conversion gain (note 4) (v dd =18v, f lo =245mhz, f rf =200mhz) 3n205 g (conv.) 17 28 db *pw=30 s, duty cycle 2.0%. 1) all gate breakdown voltages are measured while the device is conducting rated gate current. this insures that the gate volt age limiting network is functioning properly. 2) this parameter must be measured with bias voltages a pplied for less than five (5) seconds to avoid overheating. 3) u g ps is defined as the change in g ps from the value at v gg =7.0v. 4) amplitude at input from local oscillator is 3 volts rms. sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20120705
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 3N204-3n205 dual gate mosfet mechanical characteristics case: to-72 inches millimeters dim min max min max a - 0.230 - 5.840 b - 0.195 - 4.950 c - 0.210 - 5.330 d - 0.021 - 0.530 e - 0.030 - 0.760 f - 0.019 - 0.480 g 0.100 bsc 2.540 bsc h - 0.046 - 1.170 j - 0.0480 - 1.220 k 0.500 - 12.700 - l 0.250 - 6.350 - m 45c bsc 45c bsc n 0.050 bsc 1.270 bsc p - 0.050 - 1.270 available non-rohs (standard) or rohs compliant (add pbf suffix). available as ?hr? (high reliability) screened per mil-prf- 19500, jantx level. add ?hr? suffix to base part number. sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20120705
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